| 摘要 |
PURPOSE:To form a margin in the design of a semiconductor device by laminating a bump on the pad of an electrode leading pattern formed of a thin metallic film in such a manner that the length of the overhang is made correspond to the overetching length of the thin metallic film in the lateral direction. CONSTITUTION:A dry film layer 10 is covered in a thickness of 15-30mum, and holes are opened at the upper parts of an aluminum pad 4 by a PEP. Then, a gold bump layer 18 is grown in a thickness of 15-30mum. After the layer 10 is then removed by chemical medicine, with the layer 18 as a mask adjacent laminated metallic films 5, 6 are etched and removed, thereby electrically independently forming the layer 18. Since the conventional lateral gap of the resist layer in case of removing the resist layer is consequently eliminated, no etchant remains. Since the eventual size of the layer 18 is determined at the time of opening the mask, sufficient margin can be provided for the side etching at the time of designing the mask. a factor of lowering the strength of the gold bump due to overetching can be eliminated. |
