| 摘要 |
PURPOSE:To make easy automatic sensing adjustment, by changing a voltage applied to a transparent electrode timewise. CONSTITUTION:On a P type semiconductor substrate 1, an N<+> layer 2 being signal charge transfer section of CCD, amorphous semiconductor layer 3 and N layer 5 connected with a metallic electrode 4 are formed. Taking the N<+> layer surface potential as VN, the VN immediately after the readout of signal charge through the application of a voltage to a gate electrode 8 is taken as VNO. A voltage VG applied to a transparent electrode 7 is charged timewise. In an image sensing operation consisting as one period of a signal readout period to read out a signal voltage and a storage period to store signal charge, at an arbitrary period consecutive at the signal readout period, VG is kept at the VNO, and at the rest period, the voltage is held at a lower voltage V1 than the voltage VNO. Automatic sensitive adjustment is made by changing the low voltage period T1 according to the incident light amount. |
