| 摘要 |
PURPOSE:To prevent the dark part signal in an objective to be picked up from being avoided, by changing a voltage applied to a transparent electrode timewise and making automatic sensitivity adjustment. CONSTITUTION:An overflow control electrode 14 is provided adjacent to an N<+> layer 5, to control the surface potential of a semiconductor substrate between a drain N<++> layer 13 and the layer 5. A voltage VC applied to the electrode 14 is the same value as a high level voltage applied at the readout period of a readout gate electrode 8. Thus, A signal charge gives a voltage remained in the N<+> layer 5 and the charge for deficiency is injected from the overflow drain 13, allowing to prevent the signal for dark part of objective from omission. |
