发明名称 Method of manufacturing a dense silicon carbide ceramic
摘要 A method of manufacturing a dense silicon carbide ceramic includes heat treating an alpha silicon powder in a vacuum to between 1200 DEG and 1400 DEG C., adding a boron powder either before or after heat treating, then, adding a substance containing carbon, milling the mixture, compressing the milled mixture into a desired shape, sintering the formed shape at 2100 DEG C. in an argon atmosphere. The method has particular application to manufacturing parts for gas turbines.
申请公布号 US4318876(A) 申请公布日期 1982.03.09
申请号 US19800193827 申请日期 1980.10.03
申请人 SOCIETE ANONYME DITE: COMPAGNIE GENERALE D'ELECTRICITE 发明人 BROUSSAUD, DANIEL
分类号 C04B35/565;(IPC1-7):C04B35/56 主分类号 C04B35/565
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