PRODUCTION OF FIELD EFFECT SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain an enhancement type Schottky junction FET with high yield by employing a material which is able to react with a substrate but not impairing the junction characteristics, for the first layer and a material unable to react to the substrate for the second layer in an electrode material for forming a Schottky junction. CONSTITUTION:An n type GaAs layer 1 is epitaxially grown on a half-insulating GaAs substrate 1 and an Au-Ge alloy is deposited thereon to be an ohmic electrode and thermally treated to form a source electrode 3 and a drain electrode 4. Then, an electrode is provided between the electrodes to be a Schottky junction on the layer 2. Here, the following is used for the electrode material: A Pt layer 5 able to react to the layer 2 by heat treatment and a Ti layer 6 and an Au layer 7 both unable to react to the layer 2 are laminated. Thereafter, the lower level of the Pt layer 5 and GaAs layer 2 are reacted with each other to create a reaction layer 8 well controlled in the pinch off voltage.