| 摘要 |
PURPOSE:To increase the efficiency of heating, and to inhibit adhesion onto an inner wall of a bell jar by arranging an infrared heating source at one focus of a reflecting plate using a deformed rotary oval surface as a reflecting surface and one one part of a rotary oval locus of a wafer at the other focus position. CONSTITUTION:The inside of the bell jar 1 is replaced with H2, and a suscepter 2 is turned previously under atmospheric pressure, and heatded by means of the infrared heating source 5. A reflecting section of an inner surface 11a of a reflecting plate 11 is also added including a section where heat waves from one focus position are reflected by the rotary oval surfaces 10a of the reflecting plates 10, heat waves are concentrated to the wafers 4 turning at the other focus or on its neighboring rotary circular locus, and the wafers are heated preponderantly. The gas of an Si supply source and impurity gases are supplied 7 together with H2, and epitaxial layers with optional concentration is formed on the wafers 4 heated. According to this constitution, the wafers can be heated concentrically, the elevation of the temperature of a pipe wall of the bell jar can be prevented and adhesion onto the inner wall surface can be obviated, uniform films are obtained in excellent reproducibility, and the number of washing is decreased. |
