NARROW CHANNEL MOS DEVICES AND METHOD OF MANUFACTURING

摘要

NARROW CHANNEL MOS DEVICES AND METHOD OF MANUFACTURING Improved, high performance MOS transistors are provided by a method that includes providing an oxygen-impermeable mask on a selected region of a semiconductor substrate, oxidizing the unmasked portion of the surface to provide a thick oxide at least partially recessed in the substrate, which layer includes a smoothly tapered beak that extends between the margin of the mash and the underlying silicon surface. and, after removing the mask, implanting a selected impurity in the substrate beneath the selected region to form a thin impurity layer that terminates at a sloped portion of the substrate formed by the oxidation step.