发明名称 |
DEPOSITION PROCESS MONITORING AND CONTROL SYSTEM |
摘要 |
<p>A system is provided for monitoring sputtering deposition parameters and through closed-loop control achieving rapid modification of the parameters to maintain or to obtain a film composition. In reactive sputtering, the sputtering chamber has individual gas pressure controllers for the various gases to be added to the chamber. A holder for a substrate on which the film is to be deposited includes a heater with adjustable control. A differentially pumped quadrupole mass analyzer interconnects with the chamber bottom to receive a sample of plasma ions, measures the ionized species existing in the plasma and generates signals related to the film composition. A controller responsive to the quadrupole analyzer actuation adjusts the pressure of the one or more reactive or non-reactive gases being provided to the chamber, and/or controls other deposition parameters, such as substrate temperature or other plasma features.</p> |
申请公布号 |
CA1119554(A) |
申请公布日期 |
1982.03.09 |
申请号 |
CA19790327450 |
申请日期 |
1979.05.11 |
申请人 |
GOULD INC. |
发明人 |
TISONE, THOMAS C.;LATOS, THOMAS S. |
分类号 |
C23C14/00;C23C14/54;H01J37/32;H01J37/34;(IPC1-7):C23C15/00 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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