| 摘要 |
PURPOSE:To reduce the size of a titled device, and form thin films of stable film quality on substrates with good productivity by providing a take-in chamber, the 1st containing chamber, a vacuum treatment chamber, the 2nd containing chamber and a take-out chamber, and suitably disposing respective treating means. CONSTITUTION:A take-in chamber 52, the 1st containing chamber 53, a sputter etching chamber 54, a puttering chamber 55, a cooling chamber 56, the 2nd containing chamber 57, and a take-out chamber 58 are disposed in a U shape, and gate valves 64, 71, 77, 86, 101, 106, 113, 120 which operate to open only when substrates 3 pass are provided to the side wall on the inlet side of the chamber 52, between the respective chambers and the side wall on the outlet side of the chamber 58. Next, in the respective chambers, conveyor belts and exhaust ports 69, 76, 84, 100, 105, 112, 119 connecting to vacuum pumps are provided in the respective chambers. Further, cassette elevators 67, 74, 110, 117 are provided to the chambers 52, 53, 57, 58, and a sputter etching electrode 83 is provided in the chamber 54, and sputtering electrodes 90, 96 are provided in the chamber 55. Outside containing means 50, 59 for substrates are provided on the inlet side of the chamber 52 and the outlet side of the chamber 58. |
