| 摘要 |
PURPOSE:To increase the adhesion between a bonding pad and an electrode metal, by a method wherein unevenness is provided at the oxide film located just under the bonding pad of a semiconductor device and the bonding area of the oxide film and the bonding pad is increased. CONSTITUTION:Unevenness 7 is formed on the surface located just under the bonding pad of an oxide film 2 provided on a semiconductor substrate 1 and the bonding pad 52 is provided at the uneven part to bond the pad to an external lead terminal 8. This method increases the bonding area between the oxide film and the bonding pad and improves the adhesion between the bonding pad and the metal electrode. |
