| 摘要 |
PURPOSE:To allow to manufacture complementary MIS-semiconductor device, by selfmatching process, by providing a method having steps of forming P-well and low concentration region of source and drain by means of apertures prepared in the source and drain formation region of N-channel element. CONSTITUTION:An ion injection blocking film 21 is formed on an N type silicone substrate 1, making source and drain formation region of N-channel MISFET element as apertures 22, 22'. Then P type impurities are introduced into the two apertures to form P type extrinsic layer 24, 24'. Then heat treatment is applied to diffuse P type impurities introduced in the two apertures 22, 22' to form an integrated P type island shape region 25. Then, N type impurities are introduced into said apertures by ion-injection method to form the source and drain region 26, 26' of N channel MISFET element. |
