| 摘要 |
PURPOSE:To form an electrode wiring having no possibility of disconnection, by a method wherein a protecting mask for a gate electrode is formed into a pattern as large as the width of lateral diffusion and subjected to a high-temperature heat treatment by employing a plasma etching which produces an undercut. CONSTITUTION:In manufacture of an MIS type semiconductor element, on a silicon substrate 1, a gate oxide silicon film 2 and a polycrystalline silicon film 3 are laminated, and a protecting mask 10 for patterning a gate electrode is provided to form a gate electrode 13 having an undercut. Then, by utilizing said protecting mask 10, ions are injected into a source region and a drain region 5. Thereafter, said protecting mask is removed, and the surface is coated with a PSG film 6, in which an electrode window is opened, and a high-temperature heat treatment is carried out. As a result, the PSG film is melted so that the shoulder of the electrode window is made gentle, and it is possible to form an electrode wiring having no possibility of disconnection on the upper surface thereof. |
