| 摘要 |
PURPOSE:To decrease Au quantity, easily obtain an eutectic alloy with a semiconductor element, and increase bonding strength, by forming and sintering a metal paste layer which contains powdered glass, and then by forming a gold-plated element junction. CONSTITUTION:After an Ni paste layer 2 composed of a mixture of Ni 4 and powdered glass 5 is applied on a ceramic substrate 1, bonding strength between the ceramic substrate 1 and the Ni paste layer 2 is increased by sintering at temperatures near 800 deg.C in an oxidative or neutral atmosphere. Soon after removing the oxide film on the Ni paste layer 2 surface, an Au-plated layer 3 of 1.5-3mum thick is formed with Au plating. |
