| 摘要 |
PURPOSE:To perform an etching on one side only of a wafer by a method wherein the jetting port of gas, which is sent from the lower side, is provided in the center of the wafter placing region on the upper surface of a sample stand, the jetting gas is passed through the reverse side of the wafer and forms a gas curtain which is going up between the circumferential fringe section of the wafer and the sample stand. CONSTITUTION:The sample stand 11 is fitted in such a manner that a gap 14 is provided between a disc-shaped base plate 12 having a concaved upper surface and a gas lead-in hole 13 provided in the center, and a sample placing plate 15 having the concaved surface. On the upper surface of the sample placing plate 15, a concaved section 16 having the depth equal to the thickness of the wafer 19 is provided and a flowing hole 17 which is interconnected to the gas lead-in hole 13 is provided in the center of the concaved section 16 through the intermediary of the gap 14. The gas jetted out from the lead-in hole 13 is flown to the reverse side of the wafer 19 passing through a flow hole 17 and forms a gas curtain in a gap section 18 located between the circumferential fringe section of the wafer 19 and the side wall of the concaved section 16. Through these procedures, a plasma etching can be performed on one side only of the wafer. |
