| 摘要 |
<p>PURPOSE:To eliminate the contact of the main region of a gate electrode with a cathode electrode plate by forming a taper at the end side of the cathode electrode plate to become thinner toward the periphery. CONSTITUTION:An anode electrode 12, a gate electrode 13, a gate main region 13' and a cathode insular electrode 14 are formed on a silicon substrate 11, and a cathode electrode plate 15 is formed in contact with the cathode insular electrode 14. A taper is so formed at the cathode electrode plate 15 as to become thinner toward the end. The plate 15 may employ metal which can be readily chemically etched with high hardness, e.g., Mo or the like.</p> |
