| 摘要 |
PURPOSE:To obtain growth of a prescribed uniform plural semiconductor, by a method wherein an inner tube is provided in an outer tube which has a plurality of heat sources and gas can be transferred between these two tubes, then a mercury vapor source is provided in the inner tube. CONSTITUTION:An inner tube 2 is placed in an outer tube 1 which has a plurality of heat sources 3, 4. Gas can flow only through a gap between a cap 2C and a handle A of a substrate holder and a handle B of a substrate slider. At the same time, a Hg vapor source is composed by placing Hg container 5 in which metal Hg 6 is contained in a part of the said inner tube 2. A plural semiconductor which contains Hg in the form like HgCdTe can be grown up. With above method, volatilization of highly volatile material like Hg is perfectly eliminated so that the plural semiconductor growth layer with a prescribed composition can be composed. |
