发明名称 |
PROGRAMMIERBARE HALBLEITERANORDNUNG UND VERFAHREN ZU DEREN HERSTELLUNG |
摘要 |
A programmable semiconductor device having a microswitch (11) which over a part of its length is provided separately from a bridging conductor (10), for example, a word line and a supporting element. Since the dimensions of the switch (11) and the conductor (10) are independent of each other, the resistance of the conductor (10) may be low so that programmable memories having a high read-in and read-out rate are obtained. In addition the circuit element, for example a Schottky diode (3, 8) can be realized below the bridging part (12) of the conductor (10), which results in a high bit density. Since the switch (11) is present below the conductor (10) the assembly can be passivated in the unprogrammed state by means of a protective layer (20), so that the switch 11 is encapsulated in a hollow space (21). |
申请公布号 |
DE3116324(A1) |
申请公布日期 |
1982.03.04 |
申请号 |
DE19813116324 |
申请日期 |
1981.04.24 |
申请人 |
NAAMLOZE VENNOOTSCHAP PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
SIEBOLT TE VELDE,TIES;SLOB,ARIE |
分类号 |
G11C17/06;G11C17/14;G11C17/16;H01H1/00;H01H59/00;H01L21/308;H01L21/822;H01L23/525;H01L23/58;H01L27/04;H01L27/10;H01L27/12;(IPC1-7):11C11/34;01L21/90;01L23/52 |
主分类号 |
G11C17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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