| 摘要 |
PURPOSE:To incorporate a high dark resistance and a high photoconductivity in a photodetector by forming a photoelectric converting film of amorphous material which mainly contains silicon and carbon, and hydrogen and fluorine. CONSTITUTION:A diode is formed on a p type semiconductor substrate 10 of an n<+> type region 11. A diode electrode 17 is formed on the region 11, and on the electrode 17 are respectively laminated an electron stopping or hole stopping layer 18 doped with B or P on a photoconductor, a photoconductive layer 19 made of amorphous material containing mainly silicon and carbon and hydrogen and fluorine, and a transparent electrode 20. |
