发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To provide a liquid crystal driving semiconductor device which is prevented from optical leakage, by a method wherein patterning of a metal layer provided for optical shielding is operated by laser beam so that an aperture area is made minimum. CONSTITUTION:After a P<+> diffusion layer 22, a field oxide film 23 and a gate oxide film 24 are formed on a P type single crystal silicone substrate 21, a polycrystalline silicone layer 25 is formed. Then an N<+> diffusion layer 26, which is to become source and drain, is formed, a layer, insulation film 27 is formed and an aperture as a contact hole is made. The surface is covered with Al or Al-alloy overall. Then Al or Al-alloy is patterned to the prescribed pattern by laser beam so that a video signal line wiring 28 and a liquid crystal driving electrode 29 are formed. Because the laser beam can be focused to a small diameter, the area of the aperture can be minimum so that the optical leakage current can be eliminated.
申请公布号 JPS5739534(A) 申请公布日期 1982.03.04
申请号 JP19800115031 申请日期 1980.08.21
申请人 SUWA SEIKOSHA KK 发明人 MIYAZAWA CHIKAO
分类号 H01L21/3205;H01L21/027;H01L21/30 主分类号 H01L21/3205
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