| 摘要 |
PURPOSE:To decrease the source resistance of an MESFET by forming a striped projection on a semi-insulating substrate. CONSTITUTION:An N type GaAs layer 11 is epitaxially grown on a semi-insulating GaAs substrate 10, a striped projection 16 is so formed as to become mesa type in the section, and an N<+> type GaAs layer 12 is then epitaxially grown. Then, the N<+> type GaAs layer 12 and N type GaAs layer 11 are etched to form a gate electrode 13 for forming an aluminum Schottky barrier, an AuGeNi source electrode 14 and a drain electrode 15. |
