发明名称 PREPARATION OF THIN FILM VAPOR DEPOSITED OBJECT
摘要 PURPOSE:To easily form a high purity thin film vapor deposited object, in an ion plating vapor deposition method, by carrying out heating and evaporation of a substance to be evaporated by laser beam. CONSTITUTION:The inside of a vacuum tank 1 is evacuated from an exhaust port 2 to a high vacuum degree and laser beam 51 generated from a laser beam generating apparatus 5 positioned at the outside of the vacuum tank 1 is introduced through an irradiating window to be irradiated to a substance to be evaporated in a crucible 4. The substance 3 to be evaporated is heated and evaporated by the laser beam 51 and ionized by thermoelectron generated from a filament 10 of an accelerated electron generating apparatus and accelerated by an anode 11 to be converted to a particle and, further, said particle is accelerated by an accelerating electrode and substrate holder 8 to be impinged on a surface of a substrate material 9 and, thereby, a vapor deposited layer of the substance 3 to be evaporated is formed. By employing a heating method by laser, it is not necessary to heat the whole of the crucible and pollution of the vapor deposited layer due to a crusible constituting substance is eliminated.
申请公布号 JPS5739169(A) 申请公布日期 1982.03.04
申请号 JP19800114486 申请日期 1980.08.19
申请人 SEKISUI CHEMICAL CO LTD 发明人 HOTSUTA MASAHIRO;FUKUMOTO YOSHIYUKI;MIKAMI YOUICHI;KOUNO YOUJI
分类号 C23C14/28;C23C14/32 主分类号 C23C14/28
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