摘要 |
PURPOSE:To easily form a high purity thin film vapor deposited object, in an ion plating vapor deposition method, by carrying out heating and evaporation of a substance to be evaporated by laser beam. CONSTITUTION:The inside of a vacuum tank 1 is evacuated from an exhaust port 2 to a high vacuum degree and laser beam 51 generated from a laser beam generating apparatus 5 positioned at the outside of the vacuum tank 1 is introduced through an irradiating window to be irradiated to a substance to be evaporated in a crucible 4. The substance 3 to be evaporated is heated and evaporated by the laser beam 51 and ionized by thermoelectron generated from a filament 10 of an accelerated electron generating apparatus and accelerated by an anode 11 to be converted to a particle and, further, said particle is accelerated by an accelerating electrode and substrate holder 8 to be impinged on a surface of a substrate material 9 and, thereby, a vapor deposited layer of the substance 3 to be evaporated is formed. By employing a heating method by laser, it is not necessary to heat the whole of the crucible and pollution of the vapor deposited layer due to a crusible constituting substance is eliminated. |