| 摘要 |
PURPOSE:To prevent the decrease in the channel length while maintaining the thickness of a silicon layer thickly by burying an insulator layer in a semiconductor layer directly under source and drain. CONSTITUTION:A p type silicon film is grown on a sapphire substrate 111, an insular silicon layer 112 is then formed by selective etching, and an SiO2 film 113 is formed on the surface. Subsequently, a polycrystalline silicon layer is laminated, with a photoresist film 115 as a mask it is selectively etched to form a gate electrode 114, and a photoresist film 115 as a mask oxygen ions are injected to form an oxygen injection layer 116. Then, the oxygen injected by heat treatment is reacted with the silicon therearound to form an SiO2 layer 117. With the gate electrode 114 as a mask arsenic ions are injected to form a source region 118 and a drain region 119. |
