| 摘要 |
A memory element for use in photoelectric data recording apparatus of the type described in U.S. Pat. No. 3,148,354, comprising a sandwich-like structure of a top conductive electrode in electrical contact with a photoconductive material in electrical contact with a discontinuous interface layer in electrical contact with a ferroelectric material, in electrical contact with a conductive electrode substrate. The top conductive electrode and discontinuous interface layer are chosen to be blocking contact with the photoconductor in the dark, and injecting in the light. Further, one of the electrodes comprises a plurality of individual electrodes of stripe configuration while the other electrode comprises a bus bar portion and at least one reference or "ground" portion. The bus bar portion is in light controlled electrical contact with at least one localized part of the stripe configured electrodes via the photoconductor material. Where the top electrode comprises the bus bar and reference or ground portion and the discontinuous interface layer is a series of electrically conductive islands and the bottom electrode is in a striped electrode configuration, then by proper arrangement of islands and stripes, a focusing effect is achieved to allow switching of the ferroelectric material with a lower current density in the photoconductor.
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