| 摘要 |
PURPOSE:To obtain an inverter by connecting a p-n junction in series to a MOSFET or a bi-polar transistor. CONSTITUTION:An n type source 11 and an n type drain 12 are made on a p type Si substrate 10 and a p layer 13 is formed in the source 11. A poly Si gate electrode 15 is made on a gate oxide film 14 and covered with an insulation film 17. Then, a window is etched to provide an Al wire 18 thereon. With such an arrangement, an inverter is completed with a p-n junction diode as a load resistance. A high resistance load of about 1015OMEGA can be formed easily thereby reducing the occupation area thereof substantially. Thus, a high-level integrated circuit can be obtained. |
