| 发明名称 |
INVERSE FLOATING GATE SEMICONDUCTOR DEVICES |
| 摘要 |
<p>INVERSE FLOATING GATE SEMICONDUCTOR DEVICES An MOS stacked gate structure for an EPROM has an upper floating gate and a lower selection gate permitting shorter erasal time, lower selection gate voltage and a compact EPROM structure.</p> |
| 申请公布号 |
CA1119299(A) |
申请公布日期 |
1982.03.02 |
| 申请号 |
CA19790320834 |
申请日期 |
1979.02.05 |
| 申请人 |
NORTHERN TELECOM LIMITED |
发明人 |
CHAN, CHONG H.;IBRAHIM, ABD-EL-FATTAH A. |
| 分类号 |
H01L21/266;H01L21/28;H01L21/336;H01L29/08;H01L29/788;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/266 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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