发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PURPOSE:To obtain an insulating film having excellent adhesive property by forming an Al2O3 layer between a Si resin layer and a polyimide resin layer. CONSTITUTION:The Al2O3 layer is deposited on the insulating layer in Si resin in 300-5,000Angstrom thickness through sputtering, the protective layer of polymide resin is stacked on the Al2O3 layer and the whole is cured. According to this constitution, the polyimide resin does not exfoliate even when the whole is boiled for approximately five hrs. at 350 deg.C, and the protective film having high reliability is obtained.
申请公布号 JPS5737862(A) 申请公布日期 1982.03.02
申请号 JP19800113348 申请日期 1980.08.20
申请人 发明人
分类号 H01L23/29;H01L23/31 主分类号 H01L23/29
代理机构 代理人
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