| 摘要 |
PURPOSE:To highten accumulating speed and to unify quality of film in a plasma CVD device by a method wherein two kinds or more of reaction gas are made to be spouted in the separated condition perpendicularly to a group of substrates from plural spouting ports arranged in a spouting face. CONSTITUTION:Electrodes are arranged in a reaction chamber 1 facing with each other, wafers 21 are put on the lower part electrode 19 interposing a holder 20 between them, reaction gas are separatedly introduced from the upper part electrode 2 and are spouted to generate a plasma, and thin films of various kinds are formed on the wafers 21. The gas spouting part of the electrode 2 is constituted of vacant cells 15, 17 connected rspectively to introducing pipes 13, 14, plural small holes 16 for discharge arranged at the interval d less than 15mm. and connected to the vacant cell 15, and small holes 22 provided on the spouting faces of the vacant cells 17 as to surround the discharging holes 16. By making the mixed gas homogenized and distributed by this way to react in space on the substrates, improvement of film forming speed and unification of quality of film can be made as realizable, and deterioration of quality of film to be caused by accumulation of soild particles, etc., can be prevented. |
