| 摘要 |
PURPOSE:To ensure the conduction at a desired position by a method wherein wiring is stacked through a layer insulating film, partially heated and mutually melted. CONSTITUTION:The Al wiring 3 is formed on a SiO2 film 2 on an Si substrate 1. SiO2 4 is shaped through a CVD method, and the Al wiring 5 is stacked. The wiring is irradiated by a CO2 laser in vacuum, and an irradiating area is determined from a diameter of the beams and the desired conductive area. The one parts of the Al wiring 3, the SiO2 4 and the Al wiring 5 respectively are melted mutually by partial heating through irradiation, and a conductive passage 7 is shaped. When the layer insulating film 4 is made of an inorganic substance such as SiO2, both Al layers are melted mutually or evaporated and conducted when the film 4 is under a melted condition. When it is made of an organic substance such as polymidide, they are carbonized and conducted. According to this constitution, the opening of an intermediate window at an undesired position is prevented, and the shortening of a processing period and the improvement of yield are attained. |
