| 摘要 |
This invention relates to a method of producing a semiconductor device, and more particularly to a method of leading out an electrode for a semiconductor substrate. A conductor layer of polycrystalline silicon or the like is formed on the surface of the semiconductor substrate on which the substrate electrode is to be formed, a desired semiconductor region having a conductivity type opposite to that of the substrate is selectively formed under this state, and the semiconductor substrate electrode is formed on the substrate surface after removing the conductor layer.
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