| 摘要 |
PURPOSE:To obtain a laser having such a relatively long wavelength range as 3- 4mum by selecting compositions of InAsSbP as specified within the range of maintaining a relationship of grid alignment with InAs in a double hetero-junction on an InAs substrate varying the composition thereof. CONSTITUTION:Based on InAs, InSb and InP, an InAs1-U-VSbUPV clad layer, an InAs1-W-XSbWPX active layer and InAs1-Y-ZSbYPZ clad layer are laid in layers on an InAs substrate. A forbidden band range Eg (dotted line) and a dielectric constant epsilon (chain line) with respect to each solid phase composition shall meet the requirement of 0<(U+V)<=1,0<=(W+X)<1,0(X+Y)<=1 within the range of maintaining a relationship of grid alignment with InAs while the composition is selected to meet the requirement of O<=W<U, Y and O<=X<V, Z to form a double hetero junction. This provides a laser beam which has a good alignment with a two-dimensional III-V group compound semiconductor substrate while in such a relatively long wavelength as 3-4mum. |
