| 摘要 |
PURPOSE:To reduce the resistance produced at a wafer substrate in a semiconductor device by covering the surface of a silicon substrate with conductor having less specific resistance. CONSTITUTION:An epitaxial layer 23 is formed as an operating layer on an N<+> type silicon substrate 24 in such a manner than the side face is etched in a mesa shape, and front and back surface electrodes 21, 22 are formed. The electrode 22 is so connected to a metallic film 25 formed intimately in contact with the substrate 24 as to be crept along the side surface of the substrate 24. Since most surface of the silicon substrate 24 is covered with conductive metallic film having much smaller specific resistance than that of the substrate according to this configuration, it can extremely reduce the high frequency resistance and can improve the characteristics of the device. |
