| 摘要 |
PURPOSE:To obtain a package having high airtightness by employing the base materials of a stem and a cap forming the metallic package for a semiconductor element for the same material and forming the thicknesses of the corrosion resistant metals of the welded surfaces of the stem and the cap less than 1.0mum. CONSTITUTION:The base material 1 of an iron cap is formed in a cap shape, and a corrosion resistant metal 3, e.g., nickel or the like is plated in the thickness of 1.5mum on the overall surface except the welding surface 2 with the stem. Reference numeral 4 represents the base material for the stem and the same material as the base material 1 for the cap, i.e., and is formed in a stem shape with iron, and a lead bar 6 is mounted. Nickel is also plated in a thickness of 1.5mum on the entire surface of the base material 4 and on the exposed surface of the lead bar 6 except the welded surface 2' with the cap. A semiconductor element 8 is placed on the stem, the cap and the stem are resistance welded at the welding surfaces 2 and 2'. Then, a metallic package for a semiconductor element sealed at the welded part 2'' can be obtained. Since the base materials 1 and 2 can be welded directly at the welded part 2'', it has preferable airtightness. |
