| 摘要 |
PURPOSE:To prevent the stepwise disconnection of a wire in a semiconductor device by forming an interlayer insulating film of two-layer configuration formed on the predetermined pattern layer on a semiconductor layer and precipitating a material having preferable uniform adherence in the first layer and a material having preferable chemical resistance in the second layer by a plasma vapor phase growth. CONSTITUTION:Two-layer configuration film is formed as an interlayer insulating film 14 on a region including the stepwise part 3a of an aluminum electrode 3 covered on the emitter region 2 of a bipolar transistor TR for a high speed logic. The first layer is formed of a plasma PSG film 24 having 0.2mum of thickness, uniform adherence and preferable stepwise coverage, and the second layer is formed of a plasma SiO2 film 34 having 0.6mum of thickness and preferable etching property. The ratio of the thicknesses of the first and second layers should be preferably the first layer/the second layer >=1. In this manner, an interlayer insulating film having excellent stress resistance, heat crack resistance, hardness, and stepwise coverage can be formed, thereby obtaining a wire having no stepwise disconnection. |
