| 摘要 |
PURPOSE:To eliminate transistor effect of an ion implanted layer by crossing polycrystal silicon layers on isolated diffused layer patterns beforehand. CONSTITUTION:The first type transistor Tr61 is formed and fixed by the first type diffused layer pattern 58 and the corssing of the polycrystal silicon layer patterns 59 and 60. A second type transistor Tr65 is formed and fixed by the second type diffused layer pattern 62 and the crossing of the polycrystal silicon layers 63 and 64. A high potential power source line 66 and a low potential power source line 67 are formed by a metallic wiring layer. First and second type switching contact 68 which connects the input signal lines for the first and second type Trs is formed and fixed. The transistor effect of the horizontal part of the first type Tr61 is eliminated by the ion implanted layer pattern. |
