PROCESS FOR THE FABRICATION OF MASKS FOR LITHOGRAPHIC PROCESSES USING A PHOTORESIST

摘要

A resist mask comprising two layers of resist, one of which is saturated with a dilutant which does not dissolve the other. In one embodiment, the two layers of resist are applied upon a substrate, the first layer of which is more soluble in a developer. The second layer is said saturated resist and the first layer is non-saturated. This composite is preferaly used to form a relief mask with recessed sidewalls used in lift-off processes.