| 摘要 |
PURPOSE:To prevent disconnection, by a method wherein heat-resistant high molecular weight material is used as an interlayer insulator of a multilayer wiring structure composed on a semiconductor substrate so that a flat insulation film with very few pin-holes is formed. CONSTITUTION:Semiconductor grade polyimide resin is applied over a ceramics substrate 9 by spinning and an insulation film 10 is formed by thermal drying process. Al circuit pattern 11 is formed on te film 10 and the polyimide resin is again applied so as to form an insulation film layer 12. Then an aperture 13 is formed in the insulation film layer 12 by photoetching and the 2nd wiring layer 14 is formed by Al evaporation. Thus, as high molecular weight material is used as the layer insulation 12, pin-holes are not generated and difference in level is eliminated by high flattness so that disconnection of the circuit is prevented. |
