| 摘要 |
PURPOSE:To increase current amplification factor of a reverse direction transistor by removing a base region of a lateral direction transistor as a minority carrier injection element, and forming a longitudinal direction transistor provided in a high concentration diffused region in an epitaxial region. CONSTITUTION:A high concentration, N type, diffused region 13 is formed in an N type epitaxial region 11 in an emitter region of the reverse direction switchg transistor. In the meantime, a base region is formed by a low concentration epitaxial region 11 in the lateral direction PNP transistor as the carrier injection element. In a bipolar NPN transistor formed by a base region 5 and an emitter region 6, a P type base is formed in the low concentration, N type, epitaxial region 11. |
