| 摘要 |
PURPOSE:To enhance reliability of a high frequency, high power transistor, by providing an insulating material whose thickness is the same as leads between the external leads provided on a substrate, on which semiconductor elements are mounted, and providing the sealing by a cap. CONSTITUTION:A metalized layer 3 of Mo-Mn is formed and the external leads 2 comprising Kovar and the like are provided on substrate 1 of BeO and the like. The emiconductor elements such as the high frequency, high power transistor are mounted on the metalized layer 3. In the gap between said leads 2, the insulating materials 10 whose thickness is the same as that of the lead 2 are provided, and the sealing part is flattened. Then, sealing is performed by the cap with bonding resin. In this constitution, pin holes are not generated even though internal pressure becomes high, and the perfect sealing can be accomplished. Therefore the reliability of the transistor can be enhanced. |
