| 摘要 |
PURPOSE:To minimize variation in characteristics caused by plasma, by forming a conductor layer on surface of a semiconductor layer, and also by allowing an Si compound layer for passivation to make plasma gaseous phase growth on a prescribed region containing the conductor layer while earthing this conductor layer. CONSTITUTION:In an MOS memory, an intermediate passivation film 5 is formed in all the regions including a P type source, drains 2 and 3 and a poly Si gate 4 which are all formed on an N type substrate 1. This entire surface is covered by a thin metallic film 12. Any one of Mo, Ti, Al, W and amorphous Si may be used. A silicon nitride film 6 is allowed to make plasma gaseous phase growth while earthing the thin metallic film 12. It is possible, by doing so, to minimize damage by plasma and variation in characteristics of a device by interfacial load. |
