| 摘要 |
PURPOSE:To enable plural output branches to be provided, by providing emitter base junction of an inverted transistor as hetero junction wherein difference in forbidden band widths exists. CONSTITUTION:GaP and GaAs are grown 23 on the surface of a P type substrate 11 made of Si, Ge, and the like. Then, a semiconductor layer of Si and Ge is formed by adding impurities so as to obtain N type conductivity on the surface of layer 23. Thereafter, P type impurities are introduced from said surface, and P type injector and base regions 14 and 15 are formed so that they face the bottom from the surface of the semiconductor layer. Then, N type regions 16a and 16b are formed by introducing P, As, and the like so that they are contained in the base region 15 and concentration is higher than that of the regions 14 and 15. Thus a collector region is formed. |
