| 摘要 |
PURPOSE:To obtain the element having a small gate capacitance and a high mutual- conductance for the subject transistor by a method wherein a reverse conductive gate region is shallowly formed after a source and drain region has been formed, and the source and drain region contacting the gate side is removed. CONSTITUTION:For example, an N epitaxial layer 2 is grown on a P substrate 1 and after a P region 4 has been formed, apertures 7a and 7b are provided on an oxide film 3, and N type impurities are induced in the source region 8a and the drain region 8b. Then, the oxide film 3 on the surface is removed, P type impurities are induced and a P type layer 10 is formed shallower than the regions 8a and 8b. Subsequently, the regions 8a and 8b on the side section of the P region 10 are removed by etching and after a gate region 11 has been protrusively formed aparting from the source and drain region, and the surface layer is turned to an N channel JFET by performing oxidation. Through these procedures, gate capacity can be reduced and the element having high transconductance can be formed. |
