| 摘要 |
PURPOSE:To obtain a micropattern with high sensitivity and high resolution by forming a resist film made of poly-N-vinylcarbazole (co)polymer on a substrate, exposing the film to far ultraviolet rays having specified wavelengths, and removing the unexposed part by development. CONSTITUTION:A soln. of a resist polymer such as poly-N-vinylcarbazole having 20,000-1,000,000wt. average mol.wt. and <=3 dispersity represented by the ratio between wt. average mol.wt. and no. average mol.wt. or a copolymer having 10,000-1,000,000mol.wt. and consisting of N-vinylcarbazole and 10-90mol% comonomer such as diallyl phthalate or styrene is applied to an Si substrate or the like, dried, and heat-treated at 80 deg.C in a flow of gaseous N2 for about 30min to form a resist film. This film is patterwise exposed to far ultraviolet rays having 180-350nm wavelengths, and the unexposed part is removed by development with a benzene-toluene mixture. Thus, a resist pattern with dry etching resistance and high resolution is obtd. while reducing the quantity of light for exposure to 1/3-1/6 as compared to a conventional resist. |
