| 摘要 |
PURPOSE:To obtain a signlecrystalline layer on an insulating substance, by a method wherein a groove is provided on the surface of the insulating substance to cover the groove with a polycrystalline or amorphous semiconductor and singlecrystalline nuclei are provided at this part by energy beams and the semiconductor is gradually single-crystalized by moving by beams. CONSTITUTION:A nearly vertical groove with a depth of about 1,000Angstrom is made on a glass plate 1 by reactive ion etching. B doped poly Si 3 is stacked on the glass plate 1 by a CVD method and Si ions 4 of 3X10<16>/cm<2> at 200Ke V are implanted. Next, with laser light 5 bombarded on the groove, singlecrystalline Si 3 is formed in a very short period and the singlecrystalline Si 3 is affected by the groove to arrange a plane (100) in the vertical direction against the glass surface. Next, laser light is bombarded at the adjoining poly Si part and the laser light is made to follow in the crystal direction of a layer 3'1, and the conductor is gradually single-crystalized. In this composition, a singlecrystal layer having unevenness at a part and a flat section at the most part can be obtained on an insulating substance and a high accuracy etching pattern and a diffusion mask are formed by a photo etching method and a high performance device can be formed. |
