PROCESS FOR DOPING AN AMORPHOUS SEMICONDUCTOR MATERIAL BY ION IMPLANTATION

摘要

To provide for effective doping and obtain substantial conductivity change in amorphous semiconductor material, typically silicon, a body of said material is raised to a temperature above about 20 DEG C. and below the recrystallization temperature, for example in the range of between 100 DEG C., preferably above 200 DEG -250 DEG C. and below about 450 DEG C. during the ion implantation. The doping ions are, for example for silicon, of groups III and V of the periodic system, particularly boron and phosphorus. Semiconductor junctions can be made by this process by selectively doping spatially limited regions of the semiconductor body to thereby produce semiconductor components by doping with ions of different characteristics, for example of different conductivity type.