| 摘要 |
PURPOSE:To obtain a power transistor device with a protective diode formed in one body by a method wherein reverse conductive region is provided at a section on the collector region of a junction transistor and a high density region is formed in between the reverse conductive region and a base region. CONSTITUTION:A P-region 5 is provided within the area whereon a collector depletion layer will be formed on the front side of the collector region 2 of a device 10, a high density region 6 is formed between the P region and a base 3 and a structure, wherein the regions 2 and 5 are short-circuited with an electrode 9, is obtained. The density ratio of the regions 2 and 6 is established in such manner that the withstand voltage between the regions 3 and 5, which will be determined in proportion to the distance between the regions 3 and 5, will be made smaller than that between the regions 3 and 6, and the regions 2 and 3 respectively. Through these procedures, a circuit wherein a Zener diode is connected in paralled between the base and collector, can be installed in the device 10, thereby enabling to cut down the cost, miniaturize and increase the reliability of the semiconductor device. |
