DRIVING TECHNIQUE FOR THIN FILM MEMORY ELEMENTS

摘要

A method of driving a memory device having a matrix memory consisting of information wires provided respectively with magnetic thin film and to be applied with information pulse currents and word conductor wires crossing perpendicularly with said information wires and to be applied with word pulse currents; in which both of writing-in of informations "1" and "0" are carried out, respectively, by first and second bipolar information pulse currents which are different in only their polarities.