| 摘要 |
PURPOSE:To elongte the life of a laser and to avoid deterioration of reverse current characteristics by a method wherein diffusion and drive are performed without a diffusion mask which causes stresses which bring crystal defect when a laser devices is manufacturing. CONSTITUTION:An N type AlGaAs layer 22, an N type GaAs active layer 23, an N type AlGaAs layer 24, a P type AlGaAs layer 25 and an N type GaAs layer 26 are grown to be laminated by liquid phase epitaxial growth on a GaAs substrate 21 of semi-dielectric property. Next a depressed region is formed by selective etching and the substrate 21 is made exposed at the bottom of it and a P<+> type layer 27 and a P type layer 28 are formed all over it by diffusion and drive of Zn without diffusion mask. After those procedures an opening is prepared at a projected region next to a depressed region and an N type electrode 30 is attached on an exposed layer 24 and a P type electrode 29 is attached on a layer 27. Then the whole is cut into each laser element along the center line of the depressed and projected regions directed along vertical direction, and each laser element is completed. Thus generation of crystal defect in each layer is avoided by elimination of a diffusion mask usage in a process. |
