| 摘要 |
A method of fabricating a field effect transistor comprising the steps of forming an active layer of semiconductor material, e.g., GaAs, over a surface of a first substrate of semiconductor material, e.g., also GaAs, forming a gate electrode on the surface of the active layer, applying a second substrate of insulating material to the surface of this structure, removing the first substrate, and forming source and drain electrodes on the opposite surface of the active layer to the gate electrode. To facilitate removal of the GaAs first substrate by selective etching, a buffer layer of GaAlAs resistant to the GaAs etchant, may be formed between the active layer and the first substrate, which buffer layer is removed, following removal of the first substrate, using a selective etchant to which the GaAs active layer is resistant. A second gate electrode may be formed on the opposite surface of the active layer to that on which the first gate electrode is formed. The technique is particularly applicable to high frequency FET devices.
|
