| 摘要 |
1299940 Semi conductor devices INTERNATIONAL BUSINESS MACHINES CORP 17 Sept 1970 [30 Dec 1969] 44351/70 Heading H1K A diffusion method comprises doping a working crystal, of the same material as the product crystal, vaporising the working crystal, the vapour causing crystal growth of the product crystal and diffusion action of the dopant thereinto. To aid vaporization the working crystal may be powdered to a 200 to 250 Tyler mesh, the vaporization taking place in an ampoule at a temperature of 300‹ to 400‹ C. for three to five hours at a vacuum of 10<SP>-5</SP> to 10<SP>-6</SP> Torr. The crystals may be of indium antimonide and the dopant gallium or aluminium. The method may be used to produce a photo-diode having a sudden reverse voltage breakdown characteristic, and being responsive to radiation in the 2À5 to 5À6Á waveband. |
