High-voltage circuit for insulated gate field-effect transistor

摘要

A high-voltage circuit for insulated gate field-effect transistors (MOSFETs) is provided wherein two MOSFETs are connected in series, the source and gate of the first MOSFET being respectively used as a source terminal and gate terminal of the high-voltage circuit, the drain of the second MOSFET being used as a drain terminal of the circuit. First and second resistors are connected in series between the source terminal and the drain terminal, and a biasing voltage supply is connected between the juncture of both the resistors and the gate of the second MOSFET. By virtue of these connections the "on" resistance of the high-voltage circuit is improved due to the effect of the biasing voltage effect in bringing the second MOSFET into an "on" condition.